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  • SI2338DS-T1-GE3

SI2338DS-T1-GE3

MOSFET 30 Volts 6 Amps 2.5 Watts


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2338DS-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 445
  • Description: MOSFET 30 Volts 6 Amps 2.5 Watts (Kg)

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Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Fall Time (Typ) 7 ns
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Turn-Off Delay Time 20 ns
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Continuous Drain Current (ID) 6A
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET®
JESD-609 Code e3
Threshold Voltage 2.5V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate to Source Voltage (Vgs) 20V
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Drain Current-Max (Abs) (ID) 6A
Technology MOSFET (Metal Oxide)
Drain-source On Resistance-Max 0.028Ohm
Terminal Position DUAL
Terminal Form GULL WING
Drain to Source Breakdown Voltage 30V
Peak Reflow Temperature (Cel) 260
Pulsed Drain Current-Max (IDM) 25A
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
REACH SVHC No SVHC
Pin Count 3
Number of Elements 1
RoHS Status ROHS3 Compliant
Number of Channels 1
Lead Free Lead Free
Power Dissipation-Max 1.3W Ta 2.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 424pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6A Tc
See Relate Datesheet