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  • SI2367DS-T1-GE3

SI2367DS-T1-GE3

MOSFET P-CH 20V 3.8A SOT-23


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2367DS-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 982
  • Description: MOSFET P-CH 20V 3.8A SOT-23 (Kg)

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Details

Tags

Parameters
Rise Time 9ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) -3.8A
Threshold Voltage -400mV
Gate to Source Voltage (Vgs) 8V
DS Breakdown Voltage-Min 20V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 66MOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 960mW Ta 1.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 66m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 561pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.8A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 8V
See Relate Datesheet