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  • SI2369DS-T1-GE3

SI2369DS-T1-GE3

MOSFET -30V 29mOhm@-10V -7.6A P-CH


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2369DS-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 133
  • Description: MOSFET -30V 29mOhm@-10V -7.6A P-CH (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.25W Ta 2.5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1295pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7.6A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) -5.4A
Threshold Voltage -1.2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7.6A
Drain-source On Resistance-Max 0.029Ohm
Drain to Source Breakdown Voltage -30V
Max Junction Temperature (Tj) 150°C
Height 1.12mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet