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SI2374DS-T1-GE3

MOSFET N-CHAN 20V SOT23


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI2374DS-T1-GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 128
  • Description: MOSFET N-CHAN 20V SOT23 (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 735pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.5A Ta 5.9A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 4.5A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 5.9A
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C
Height 1.12mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 960mW Ta 1.7W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
See Relate Datesheet