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  • SI3433CDV-T1-E3

SI3433CDV-T1-E3

MOSFET P-CH 20V 6A 6TSOP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI3433CDV-T1-E3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 181
  • Description: MOSFET P-CH 20V 6A 6TSOP (Kg)

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Details

Tags

Parameters
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) -6A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 5.2A
Drain-source On Resistance-Max 0.038Ohm
DS Breakdown Voltage-Min 20V
Height 1mm
Length 3.05mm
Width 1.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 19.986414mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 38m Ω @ 5.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 8V
Rise Time 22ns
See Relate Datesheet