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  • SI3437DV-T1-E3

SI3437DV-T1-E3

MOSFET P-CH 150V 1.4A 6-TSOP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI3437DV-T1-E3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 149
  • Description: MOSFET P-CH 150V 1.4A 6-TSOP (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 19.986414mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 750mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Max Output Current 2A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta 3.2W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 14 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 750m Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 50V
Current - Continuous Drain (Id) @ 25°C 1.4A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 29ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 1.1A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 5A
Dual Supply Voltage -150V
Nominal Vgs -4 V
Height 1mm
Length 3.05mm
Width 1.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet