All Products
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Connectors
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Discrete Semiconductors
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Capacitors
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RF/IF & RFID
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Vishay Siliconix(2369)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Max Output Current | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIR404DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 6.15mm | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | 1.04mm | 5.15mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 6.25W | 35 ns | 6.25W Ta 104W Tc | 45.6A | 123 ns | SILICON | N-Channel | 1.6m Ω @ 20A, 10V | 1.5V @ 250μA | 8130pF @ 10V | 97nC @ 4.5V | 20ns | 26 ns | 12V | 20V | 60A | 60A Tc | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||
| SI7115DN-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | 1.04mm | 3.05mm | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | Other Transistors | 1 | DRAIN | Single | 3.7W | 11 ns | 52W Tc | 2.3A | SWITCHING | 0.295Ohm | 52 ns | SILICON | P-Channel | 295m Ω @ 4A, 10V | 4V @ 250μA | 1190pF @ 50V | 42nC @ 10V | 28ns | 35 ns | 20V | -150V | 8.9A Tc | 150V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SQS484ENW-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | PowerPAK® 1212-8 | unknown | 1.17mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | YES | S-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 62.5W | 11 ns | 62.5W Tc | 16A | 175°C | 25 ns | SILICON | N-Channel | 8m Ω @ 10A, 10V | 2.5V @ 250μA | 1800pF @ 25V | 35nC @ 10V | 20V | 40V | 16A Tc | 64A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3460BDV-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | Tin | No | 6 | SOT-23-6 Thin, TSOT-23-6 | Unknown | 1mm | 1.65mm | 27mOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 6 | 1 | FET General Purpose Power | 1 | 2A | Single | 2W | 5 ns | 1V | 2W Ta 3.5W Tc | 8A | SWITCHING | 25 ns | SILICON | N-Channel | 27m Ω @ 5.1A, 4.5V | 1V @ 250μA | 860pF @ 10V | 24nC @ 8V | 15ns | 5 ns | 8V | 20V | 1 V | 8A | 8A Tc | 20A | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||
| TN2404K-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | Tin | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Powers | 1 | Single | 360mW | 5 ns | 800mV | 360mW Ta | 200mA | SWITCHING | 4Ohm | 35 ns | SILICON | N-Channel | 4 Ω @ 300mA, 10V | 2V @ 250μA | 8nC @ 10V | 12ns | 16 ns | 20V | 240V | 800 mV | 0.2A | 200mA Ta | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI3437DV-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 1mm | 1.65mm | 750mOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 40 | 6 | 1 | Other Transistors | 1 | 2A | Single | 2W | 14 ns | -4V | 2W Ta 3.2W Tc | 1.1A | 23 ns | SILICON | P-Channel | 750m Ω @ 1.4A, 10V | 4V @ 250μA | 510pF @ 50V | 19nC @ 10V | 29ns | 14 ns | 20V | -150V | -4 V | 1.4A Tc | 150V | 5A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
| SISS27ADN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen III | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® 1212-8S | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 57W Tc | P-Channel | 5.1m Ω @ 15A, 10V | 2.2V @ 250μA | 4660pF @ 15V | 55nC @ 4.5V | 50A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2316DS-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.02mm | 1.4mm | 50mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2A | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Power | 30V | 1 | Single | 700mW | 9 ns | 700mW Ta | 3.4A | SWITCHING | 14 ns | SILICON | N-Channel | 50m Ω @ 3.4A, 10V | 800mV @ 250μA (Min) | 215pF @ 15V | 7nC @ 10V | 9ns | 9 ns | 20V | 800 mV | 2.9A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIR826DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2011 | TrenchFET® | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 6.25W | 15 ns | 1.2V | 4mOhm | PowerPAK® SO-8 | 6.25W Ta 104W Tc | 60A | 36 ns | N-Channel | 4.8mOhm @ 20A, 10V | 2.8V @ 250μA | 2900pF @ 40V | 90nC @ 10V | 14ns | 8 ns | 20V | 60A Tc | 80V | 2.9nF | 4.5V 10V | ±20V | 4.8 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF640SPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 180mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 4 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 130W | 14 ns | 4V | 3.1W Ta 130W Tc | 18A | SWITCHING | 45 ns | SILICON | N-Channel | 180m Ω @ 11A, 10V | 4V @ 250μA | 1300pF @ 25V | 70nC @ 10V | 51ns | 36 ns | 20V | 200V | 4 V | 18A Tc | 72A | 580 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI4156DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | Tin | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | unknown | 6mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | Not Qualified | 1 | Single | 2.5W | 25 ns | 2.2V | 2.5W Ta 6W Tc | 24A | SWITCHING | 25 ns | SILICON | N-Channel | 6m Ω @ 15.7A, 10V | 2.2V @ 250μA | 1700pF @ 15V | 42nC @ 10V | 20ns | 15 ns | 20V | 30V | 24A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI4825DDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | 12.5MOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 30 | 8 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 2.7W | 48 ns | -1.4V | 2.7W Ta 5W Tc | 10.9A | SWITCHING | 34 ns | SILICON | P-Channel | 12.5m Ω @ 10A, 10V | 2.5V @ 250μA | 2550pF @ 15V | 86nC @ 10V | 92ns | 19 ns | 25V | -30V | 14.9A Tc | 30V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| IRFZ24PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 100mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 260 | 40 | 3 | 1 | FET General Purpose Power | 1 | TO-220AB | Single | 60W | 13 ns | 4V | 60W Tc | 17A | SWITCHING | 25 ns | SILICON | N-Channel | 100m Ω @ 10A, 10V | 4V @ 250μA | 640pF @ 25V | 25nC @ 10V | 58ns | 42 ns | 20V | 60V | 17A Tc | 68A | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI4136DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 3.5W | 34 ns | 1V | 3.5W Ta 7.8W Tc | 46A | SWITCHING | 0.0026Ohm | 50 ns | SILICON | N-Channel | 2m Ω @ 15A, 10V | 2.2V @ 250μA | 4560pF @ 10V | 110nC @ 10V | 26ns | 23 ns | 20V | 20V | 46A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI7110DN-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.05mm | 4.9mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 1.5W | 12 ns | 2.5V | 1.5W Ta | 20A | SWITCHING | 36 ns | SILICON | N-Channel | 5.3m Ω @ 21.1A, 10V | 2.5V @ 250μA | 21nC @ 4.5V | 10ns | 10 ns | 20V | 20V | 13.5A Ta | 60A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIR182DP-T1-RE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen IV | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 69.4W Tc | SWITCHING | 0.0028Ohm | 60V | SILICON | N-Channel | 2.8m Ω @ 15A, 10V | 3.6V @ 250μA | 3250pF @ 30V | 64nC @ 10V | 117A | 60A Tc | 60V | 200A | 61.25 mJ | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7112DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.05mm | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 1.5W | 10 ns | 600mV | 1.5W Ta | 11.3A | SWITCHING | 0.0075Ohm | 30V | 65 ns | SILICON | N-Channel | 7.5m Ω @ 17.8A, 10V | 1.5V @ 250μA | 2610pF @ 15V | 27nC @ 4.5V | 10ns | 10 ns | 12V | 11.3A Tc | 30V | 60A | 20 mJ | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||
| IRFU110PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2010 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.38mm | 540mOhm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 260 | 40 | 3 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 25W | 6.9 ns | 4V | 25W Tc | 4.3A | SWITCHING | 15 ns | SILICON | N-Channel | 540m Ω @ 900mA, 10V | 4V @ 250μA | 180pF @ 25V | 8.3nC @ 10V | 16ns | 9.4 ns | 20V | 100V | 4.3A Tc | 75 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRLU014PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 150°C | -55°C | 6.73mm | ROHS3 Compliant | Lead Free | 7.7A | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | 200mOhm | Through Hole | 329.988449mg | -55°C~150°C TJ | 60V | MOSFET (Metal Oxide) | 1 | 1 | Single | 2.5W | 9.3 ns | 2V | 200mOhm | TO-251AA | 2.5W Ta 25W Tc | 7.7A | 17 ns | N-Channel | 200mOhm @ 4.6A, 5V | 2V @ 250μA | 400pF @ 25V | 8.4nC @ 5V | 110ns | 26 ns | 10V | 60V | 7.7A Tc | 60V | 400pF | 4V 5V | ±10V | 200 mΩ | ||||||||||||||||||||||||||||||||||||||||
| SIHG33N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-247-3 | Unknown | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 278W | 56 ns | 2V | 99mOhm | TO-247AC | 278W Tc | 33A | 150 ns | N-Channel | 99mOhm @ 16.5A, 10V | 4V @ 250μA | 3508pF @ 100V | 150nC @ 10V | 90ns | 80 ns | 20V | 600V | 33A Tc | 600V | 3.508nF | 10V | ±30V | 99 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| SIHP28N65EF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Through Hole | Tube | 2017 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 250W Tc | 28A | SWITCHING | 0.117Ohm | 650V | SILICON | N-Channel | 117m Ω @ 14A, 10V | 4V @ 250μA | 3249pF @ 100V | 146nC @ 10V | 28A Tc | 650V | 87A | 427 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002K-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | Active | 1 (Unlimited) | 150°C | -55°C | 3.0226mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.12mm | 1.397mm | 2Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 350mW | 25 ns | 2.5V | 2Ohm | SOT-23-3 (TO-236) | 350mW Ta | 300mA | 150°C | 35 ns | N-Channel | 2Ohm @ 500mA, 10V | 2.5V @ 250μA | 30pF @ 25V | 0.6nC @ 4.5V | 20V | 60V | 2 V | 300mA Ta | 60V | 30pF | 4.5V 10V | ±20V | 2 Ω | ||||||||||||||||||||||||||||||||||||||||||
| SI7123DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 5 | EAR99 | 3.3mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.3mm | 10.6mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.5W | 25 ns | -1V | 1.5W Ta | -25A | SWITCHING | 82 ns | SILICON | P-Channel | 10.6m Ω @ 15A, 4.5V | 1V @ 250μA | 3729pF @ 10V | 90nC @ 4.5V | 88ns | 88 ns | 8V | -20V | 10.2A Ta | 20V | 40A | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SI8802DB-T2-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Surface Mount | Digi-Reel® | 2015 | TrenchFET® | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 4 | 4-XFBGA | Unknown | 54mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | BOTTOM | BALL | 4 | 1 | FET General Purpose Power | 1 | Single | 500mW | 5 ns | 500mW Ta | 3.5A | SWITCHING | 22 ns | SILICON | N-Channel | 54m Ω @ 1A, 4.5V | 700mV @ 250μA | 6.5nC @ 4.5V | 15ns | 7 ns | 5V | 8V | 350 mV | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||
| SI5415AEDU-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® ChipFET™ Single | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | Pure Matte Tin (Sn) | 260 | 30 | 1 | Single | 3.1W | 12 ns | 3.1W Ta 31W Tc | 25A | 80 ns | P-Channel | 9.6m Ω @ 10A, 4.5V | 1V @ 250μA | 4300pF @ 10V | 120nC @ 8V | 45ns | 25 ns | 8V | -20V | 25A Tc | 20V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA66DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2014 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 8 | PowerPAK® SO-8 | unknown | 1.9mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 62.5W Tc | N-Channel | 2.3m Ω @ 15A, 10V | 2.2V @ 1mA | 66nC @ 10V | 50A Tc | 30V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3469DV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | No | 6 | SOT-23-6 Thin, TSOT-23-6 | Unknown | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6 | 1 | Other Transistors | 1 | Single | 1.14W | 10 ns | -1V | 1.14W Ta | -6.7A | SWITCHING | 0.03Ohm | 50 ns | SILICON | P-Channel | 30m Ω @ 6.7A, 10V | 3V @ 250μA | 30nC @ 10V | 12ns | 35 ns | 20V | -20V | -1 V | 5A | 5A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI4386DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 8 | 1 | FET General Purpose Power | 1 | Single | 12 ns | 2V | 1.47W Ta | 16A | SWITCHING | 0.007Ohm | 30V | 35 ns | SILICON | N-Channel | 7m Ω @ 16A, 10V | 2.5V @ 250μA | 18nC @ 4.5V | 9ns | 9 ns | 20V | 11A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI8413DB-T1-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 4 | EAR99 | 1.6mm | ROHS3 Compliant | No | 4 | 4-XFBGA, CSPBGA | 360μm | 1.6mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | BALL | 260 | 40 | 4 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | 1.47W | 31 ns | 1.47W Ta | -6.5A | SWITCHING | 0.063Ohm | 20V | 105 ns | SILICON | P-Channel | 48m Ω @ 1A, 4.5V | 1.4V @ 250μA | 21nC @ 4.5V | 50ns | 50 ns | 12V | 4.8A Ta | 20V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| IRFR9010PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2014 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | Other Transistors | 1 | DRAIN | Single | 25W | 6.1 ns | 25W Tc | 5.3A | SWITCHING | 0.5Ohm | 13 ns | SILICON | P-Channel | 500m Ω @ 2.8A, 10V | 4V @ 250μA | 240pF @ 25V | 9.1nC @ 10V | 47ns | 35 ns | 20V | -50V | 5.3A Tc | 50V | 10V | ±20V |