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  • SI3443BDV-T1-E3

SI3443BDV-T1-E3

MOSFET P-CH 20V 3.6A 6-TSOP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI3443BDV-T1-E3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 637
  • Description: MOSFET P-CH 20V 3.6A 6-TSOP (Kg)

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Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 60m Ω @ 4.7A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 25 ns
Factory Lead Time 14 Weeks
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 3.6A
Threshold Voltage -1.4V
Contact Plating Tin
Gate to Source Voltage (Vgs) 12V
Mount Surface Mount
Drain to Source Breakdown Voltage -20V
Nominal Vgs -1.4 V
Mounting Type Surface Mount
Height 990.6μm
Length 3.05mm
Package / Case SOT-23-6 Thin, TSOT-23-6
Width 1.65mm
Radiation Hardening No
Number of Pins 6
REACH SVHC No SVHC
Weight 19.986414mg
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 60mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 22 ns
FET Type P-Channel
See Relate Datesheet