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  • SI3443CDV-T1-GE3

SI3443CDV-T1-GE3

MOSFET P-CH 20V 5.97A 6TSOP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI3443CDV-T1-GE3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 467
  • Description: MOSFET P-CH 20V 5.97A 6TSOP (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 19.986414mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 60mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta 3.2W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Turn On Delay Time 27 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 4.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5.97A Tc
Gate Charge (Qg) (Max) @ Vgs 12.4nC @ 5V
Rise Time 59ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 3.9A
Threshold Voltage -600mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 5.97A
Drain to Source Breakdown Voltage -20V
Nominal Vgs -600 mV
Height 1mm
Length 3.05mm
Width 1.65mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet