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  • SI3460BDV-T1-E3

SI3460BDV-T1-E3

MOSFET N-CH 20V 8A 6-TSOP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI3460BDV-T1-E3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 626
  • Description: MOSFET N-CH 20V 8A 6-TSOP (Kg)

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Details

Tags

Parameters
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Max Output Current 2A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta 3.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 8V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 8A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 8A
Pulsed Drain Current-Max (IDM) 20A
Dual Supply Voltage 20V
Nominal Vgs 1 V
Height 1mm
Length 3.05mm
Width 1.65mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 19.986414mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 27mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
See Relate Datesheet