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  • SI3460BDV-T1-GE3

SI3460BDV-T1-GE3

MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI3460BDV-T1-GE3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 225
  • Description: MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 19.986414mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Pure Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta 3.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 8V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 6.7A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.027Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 20A
Nominal Vgs 1 V
Height 1mm
Length 3.05mm
Width 1.65mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet