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  • SI3460DDV-T1-GE3

SI3460DDV-T1-GE3

MOSFET 20V 7.9A N-CH MOSFET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI3460DDV-T1-GE3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 752
  • Description: MOSFET 20V 7.9A N-CH MOSFET (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 19.986414mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 28mOhm
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.7W Ta 2.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.7W
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 666pF @ 10V
Current - Continuous Drain (Id) @ 25°C 7.9A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 8V
Rise Time 11ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 7.9A
Threshold Voltage 400mV
Gate to Source Voltage (Vgs) 8V
DS Breakdown Voltage-Min 20V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet