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  • SI3932DV-T1-GE3

SI3932DV-T1-GE3

MOSFET 30V 3.7A DUAL N-CH MOSFET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI3932DV-T1-GE3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 533
  • Description: MOSFET 30V 3.7A DUAL N-CH MOSFET (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 19.986414mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 58MOhm
Subcategory FET General Purpose Powers
Max Power Dissipation 1.4W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI3932
Pin Count 6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.14W
Turn On Delay Time 5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 58m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 235pF @ 15V
Current - Continuous Drain (Id) @ 25°C 3.7A
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Rise Time 15ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 3.4A
Threshold Voltage 2.2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.7A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 1.2 V
Height 1.1mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet