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  • SI4062DY-T1-GE3

SI4062DY-T1-GE3

MOSFET 60V 4.2mOhm@10V 32.1A N-CH


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4062DY-T1-GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 904
  • Description: MOSFET 60V 4.2mOhm@10V 32.1A N-CH (Kg)

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Details

Tags

Parameters
Number of Terminations 8
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 7.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 52 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3175pF @ 30V
Current - Continuous Drain (Id) @ 25°C 32.1A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 105ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 32.1A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0042Ohm
Drain to Source Breakdown Voltage 60V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
See Relate Datesheet