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  • SI4136DY-T1-GE3

SI4136DY-T1-GE3

Prices include import duty and tax. MOSFET Transistor, N Channel, 46 A, 20 V, 0.00155 ohm, 10 V, 1 V;


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4136DY-T1-GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 443
  • Description: Prices include import duty and tax. MOSFET Transistor, N Channel, 46 A, 20 V, 0.00155 ohm, 10 V, 1 V; (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3.5W Ta 7.8W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Turn On Delay Time 34 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4560pF @ 10V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 26ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 46A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0026Ohm
Drain to Source Breakdown Voltage 20V
Height 1.55mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet