All Products

SI4401BDY-T1-GE3

power mosfet 40V 20V-TRANSISTOR FET N-CH


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4401BDY-T1-GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 935
  • Description: power mosfet 40V 20V-TRANSISTOR FET N-CH (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
REACH SVHC Unknown
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
RoHS Status ROHS3 Compliant
ECCN Code EAR99
Resistance 14MOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Lead Free Lead Free
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 16 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 14m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.7A Ta
Gate Charge (Qg) (Max) @ Vgs 55nC @ 5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 97 ns
Continuous Drain Current (ID) -10.5A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -40V
Max Junction Temperature (Tj) 150°C
Factory Lead Time 14 Weeks
Height 1.75mm
Contact Plating Tin
Length 5mm
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Width 4mm
Weight 186.993455mg
Transistor Element Material SILICON
Radiation Hardening No
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
See Relate Datesheet