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  • SI4423DY-T1-E3

SI4423DY-T1-E3

MOSFET P-CH 20V 10A 8-SOIC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4423DY-T1-E3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 303
  • Description: MOSFET P-CH 20V 10A 8-SOIC (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 7.5mOhm
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 75 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 14A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 600μA
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 175nC @ 5V
Rise Time 165ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 165 ns
Turn-Off Delay Time 460 ns
Continuous Drain Current (ID) -14A
Threshold Voltage -400mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Nominal Vgs -400 mV
Height 1.5494mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet