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  • SI4427BDY-T1-E3

SI4427BDY-T1-E3

MOSFET 30V 13.3A 3W


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4427BDY-T1-E3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 388
  • Description: MOSFET 30V 13.3A 3W (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Turn On Delay Time 12 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 10.5m Ω @ 12.6A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9.7A Ta
Gate Charge (Qg) (Max) @ Vgs 70nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 242 ns
Factory Lead Time 14 Weeks
Continuous Drain Current (ID) -12.6A
Threshold Voltage -1.4V
Mount Surface Mount
Mounting Type Surface Mount
Gate to Source Voltage (Vgs) 12V
Package / Case 8-SOIC (0.154, 3.90mm Width)
Drain Current-Max (Abs) (ID) 9.7A
Number of Pins 8
Drain to Source Breakdown Voltage -30V
Weight 186.993455mg
Height 1.55mm
Length 5mm
Transistor Element Material SILICON
Width 4mm
Radiation Hardening No
REACH SVHC Unknown
Operating Temperature -55°C~150°C TJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 10.5mOhm
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
See Relate Datesheet