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  • SI4431BDY-T1-E3

SI4431BDY-T1-E3

MOSFET P-CH 30V 5.7A 8-SOIC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4431BDY-T1-E3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 443
  • Description: MOSFET P-CH 30V 5.7A 8-SOIC (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 30mOhm
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 10 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 30m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.7A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 10ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 47 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) -7.5A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5.7A
Drain to Source Breakdown Voltage -30V
Dual Supply Voltage -30V
Max Junction Temperature (Tj) 150°C
Nominal Vgs -1 V
Height 1.75mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet