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  • SI4447DY-T1-GE3

SI4447DY-T1-GE3

MOSFET P-CH 40V 3.3A 8-SOIC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4447DY-T1-GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 240
  • Description: MOSFET P-CH 40V 3.3A 8-SOIC (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 72m Ω @ 4.5A, 15V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 805pF @ 20V
Current - Continuous Drain (Id) @ 25°C 3.3A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 12ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 15V 10V
Vgs (Max) ±16V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 74 ns
Continuous Drain Current (ID) -3.3A
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.054Ohm
Drain to Source Breakdown Voltage -40V
Pulsed Drain Current-Max (IDM) 30A
Height 1.5mm
Length 5mm
Width 4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet