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  • SI4463CDY-T1-GE3

SI4463CDY-T1-GE3

VISHAY SI4463CDY-T1-GE3 MOSFET Transistor, P Channel, -18.6 A, -20 V, 0.006 ohm, -10 V, -600 mV


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4463CDY-T1-GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 478
  • Description: VISHAY SI4463CDY-T1-GE3 MOSFET Transistor, P Channel, -18.6 A, -20 V, 0.006 ohm, -10 V, -600 mV (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Weight 506.605978mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 8mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.7W Ta 5W Tc
Element Configuration Single
Power Dissipation 2.7W
Turn On Delay Time 12 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4250pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13.6A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 162nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) -13.6A
Threshold Voltage -600mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 6mOhm
Height 1.75mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet