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SI4465ADY-T1-GE3
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Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
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basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and
country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 4.5V |
| Rise Time | 170ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 112 ns |
| Turn-Off Delay Time | 168 ns |
| Continuous Drain Current (ID) | 13.7A |
| Threshold Voltage | -450mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 20A |
| Drain-source On Resistance-Max | 0.009Ohm |
| Drain to Source Breakdown Voltage | -8V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 186.993455mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | TrenchFET® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Pure Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3W Ta 6.5W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3W |
| Turn On Delay Time | 33 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 9m Ω @ 14A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
See Relate Datesheet