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  • SI4480DY-T1-E3

SI4480DY-T1-E3

MOSFET N-CH 80V 6A 8-SOIC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4480DY-T1-E3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 416
  • Description: MOSFET N-CH 80V 6A 8-SOIC (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Weight 186.993455mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 35mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 12.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 12.5ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Drain to Source Resistance 35mOhm
Rds On Max 35 mΩ
Height 1.55mm
Length 5mm
Width 4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet