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  • SI4497DY-T1-GE3

SI4497DY-T1-GE3

Trans Mosfet P-ch 30V 36A 8-PIN SOIC N T/r


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4497DY-T1-GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 749
  • Description: Trans Mosfet P-ch 30V 36A 8-PIN SOIC N T/r (Kg)

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Details

Tags

Parameters
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 3.3mOhm
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3.5W Ta 7.8W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Turn On Delay Time 19 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9685pF @ 15V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 285nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 115 ns
Continuous Drain Current (ID) -24.8A
Threshold Voltage -2.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 36A
Drain to Source Breakdown Voltage -30V
Max Junction Temperature (Tj) 150°C
Nominal Vgs -1 V
Height 1.75mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
See Relate Datesheet