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  • SI4630DY-T1-GE3

SI4630DY-T1-GE3

MOSFET N-CH 25V 40A 8-SOIC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4630DY-T1-GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 448
  • Description: MOSFET N-CH 25V 40A 8-SOIC (Kg)

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Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 161nC @ 10V
Rise Time 93ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 36A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 27A
Drain-source On Resistance-Max 0.0027Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 45 mJ
Height 1.55mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.5W Ta 7.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6670pF @ 15V
See Relate Datesheet