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SI4838BDY-T1-GE3

MOSFET N-CH 12V 34A 8-SOIC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4838BDY-T1-GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 589
  • Description: MOSFET N-CH 12V 34A 8-SOIC (Kg)

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Details

Tags

Parameters
Continuous Drain Current (ID) 22.5A
Threshold Voltage 400mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 12V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 400 mV
Height 1.75mm
Length 5mm
Width 4mm
Radiation Hardening No
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
REACH SVHC Unknown
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
RoHS Status ROHS3 Compliant
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Lead Free Lead Free
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 2.7mOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 5.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7m Ω @ 15A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5760pF @ 6V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 84nC @ 4.5V
Rise Time 92ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 56 ns
See Relate Datesheet