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  • SI4838DY-T1-E3

SI4838DY-T1-E3

MOSFET N-CH 12V 17A 8-SOIC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4838DY-T1-E3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 378
  • Description: MOSFET N-CH 12V 17A 8-SOIC (Kg)

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Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 3mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Turn On Delay Time 40 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3m Ω @ 25A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 17A Ta
Gate Charge (Qg) (Max) @ Vgs 60nC @ 4.5V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 12V
Nominal Vgs 600 mV
Height 1.55mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC Unknown
See Relate Datesheet