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  • SI4842BDY-T1-E3

SI4842BDY-T1-E3

Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4842BDY-T1-E3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 170
  • Description: Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R (Kg)

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Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 28A Tc
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Number of Terminations 8
Rise Time 190ns
ECCN Code EAR99
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Resistance 4.2mOhm
Fall Time (Typ) 13 ns
Turn-Off Delay Time 38 ns
Subcategory FET General Purpose Powers
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.4 V
Technology MOSFET (Metal Oxide)
Height 1.55mm
Length 5mm
Terminal Position DUAL
Width 4mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Terminal Form GULL WING
Lead Free Lead Free
Peak Reflow Temperature (Cel) 260
Factory Lead Time 14 Weeks
Time@Peak Reflow Temperature-Max (s) 20
Contact Plating Tin
Pin Count 8
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Qualification Status Not Qualified
Number of Pins 8
Number of Elements 1
Weight 186.993455mg
Number of Channels 1
Transistor Element Material SILICON
Power Dissipation-Max 3W Ta 6.25W Tc
Operating Temperature -55°C~150°C TJ
Element Configuration Single
Packaging Tape & Reel (TR)
Operating Mode ENHANCEMENT MODE
Published 2009
Power Dissipation 6.25W
Series TrenchFET®
Turn On Delay Time 125 ns
JESD-609 Code e3
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.2m Ω @ 20A, 10V
Pbfree Code yes
Vgs(th) (Max) @ Id 3V @ 250μA
Part Status Active
Input Capacitance (Ciss) (Max) @ Vds 3650pF @ 15V
See Relate Datesheet