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  • SI4866BDY-T1-E3

SI4866BDY-T1-E3

MOSFET 12V 21.5A 4.45W


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4866BDY-T1-E3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 554
  • Description: MOSFET 12V 21.5A 4.45W (Kg)

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Details

Tags

Parameters
Factory Lead Time 15 Weeks
RoHS Status ROHS3 Compliant
Mount Surface Mount
Lead Free Lead Free
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 5.3MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 4.45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.3m Ω @ 12A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5020pF @ 6V
Current - Continuous Drain (Id) @ 25°C 21.5A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 4.5V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 57 ns
Continuous Drain Current (ID) 16.1A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 12V
Pulsed Drain Current-Max (IDM) 50A
Avalanche Energy Rating (Eas) 20 mJ
Max Junction Temperature (Tj) 150°C
Height 1.75mm
Length 5mm
Width 4mm
Radiation Hardening No
See Relate Datesheet