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  • SI4874BDY-T1-E3

SI4874BDY-T1-E3

MOSFET N-CH 30V 12A 8-SOIC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4874BDY-T1-E3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 997
  • Description: MOSFET N-CH 30V 12A 8-SOIC (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 7mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3230pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Rise Time 10ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 57 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 30V
Height 1.55mm
Length 5mm
Width 4mm
See Relate Datesheet