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  • SI4896DY-T1-GE3

SI4896DY-T1-GE3

MOSFET N-CH 80V 6.7A 8SOIC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4896DY-T1-GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 233
  • Description: MOSFET N-CH 80V 6.7A 8SOIC (Kg)

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Details

Tags

Parameters
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.56W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.56W
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 6.7A Ta
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 6.7A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
See Relate Datesheet