Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Frequency | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Supply Current | Operating Mode | Max Supply Current | Bandwidth | Height Seated (Max) | Current | Number of Functions | Nominal Supply Current | Lead Length | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | Terminal Pitch | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Power Supplies | Max Power Dissipation | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Number of Outputs | Feature | Analog IC - Other Type | Case Connection | Throw Configuration | Applications | Element Configuration | Power Dissipation | Propagation Delay | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Min Dual Supply Voltage | Drain to Source Resistance | Neg Supply Voltage-Nom (Vsup) | On-State Resistance (Max) | Supplier Device Package | -3db Bandwidth | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Logic Function | Number of Inputs | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Supply Type | Switch-on Time-Max | Switch-off Time-Max | Switching | Normal Position | Off-state Isolation-Nom | On-state Resistance Match-Nom | Voltage - Supply, Single/Dual (±) | Signal Current-Max | Switch Circuit | Voltage - Supply, Single (V+) | Multiplexer/Demultiplexer Circuit |
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SUD90330E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | ThunderFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | 2.507mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 125W | 12 ns | 125W Tc | 35.8A | 175°C | 30 ns | N-Channel | 37.5m Ω @ 12.2A, 10V | 4V @ 250μA | 1172pF @ 100V | 32nC @ 10V | 20V | 200V | 35.8A Tc | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4430BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 30 | 8 | 1 | 1 | Single | 20 ns | 3V | 1.6W Ta | 20A | 0.0045Ohm | 60 ns | SILICON | N-Channel | 4.5m Ω @ 20A, 10V | 3V @ 250μA | 36nC @ 4.5V | 14ns | 14 ns | 20V | 30V | 14A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIR846ADP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | 6.25mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.12mm | 5.26mm | 9.5MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | R-PDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 5.4W | 14 ns | 1.8V | 5.4W Ta 83W Tc | 60A | SWITCHING | 28 ns | SILICON | N-Channel | 7.8m Ω @ 20A, 10V | 3V @ 250μA | 2350pF @ 50V | 66nC @ 10V | 20V | 100V | 60A Tc | 200A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU014PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | 200mOhm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 9.65mm | 260 | 40 | 3 | 1 | 1 | DRAIN | Single | 2.5W | 10 ns | 4V | 2.5W Ta 25W Tc | 7.7A | SWITCHING | 60V | 13 ns | SILICON | N-Channel | 200m Ω @ 4.6A, 10V | 4V @ 250μA | 300pF @ 25V | 11nC @ 10V | 50ns | 19 ns | 20V | 7.7A Tc | 60V | 27.4 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF640STRLPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount, Through Hole | Tape & Reel (TR) | 2015 | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | 180mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 4 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 130W | 14 ns | 3.1W Ta 130W Tc | 18A | SWITCHING | 45 ns | SILICON | N-Channel | 180m Ω @ 11A, 10V | 4V @ 250μA | 1300pF @ 25V | 70nC @ 10V | 51ns | 36 ns | 20V | 200V | 18A Tc | 72A | 580 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQJA00EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 48W | 13 ns | 48W Tc | 30A | 175°C | 23 ns | SILICON | N-Channel | 13m Ω @ 10A, 10V | 3.5V @ 250μA | 1700pF @ 25V | 35nC @ 10V | 20V | 60V | 25.6A | 30A Tc | 84A | 26.5 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7309DN-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | 1.04mm | 3.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | Other Transistors | 1 | DRAIN | Single | 3.2W | 10 ns | 3.2W Ta 19.8W Tc | -8A | SWITCHING | 30 ns | SILICON | P-Channel | 115m Ω @ 3.9A, 10V | 3V @ 250μA | 600pF @ 30V | 22nC @ 10V | 15ns | 33 ns | 20V | -60V | 8A | 8A Tc | 60V | 20A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI3438DV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 Thin, TSOT-23-6 | 35.5mOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6 | 1 | FET General Purpose Power | 1 | Single | 2W | 16 ns | 2W Ta 3.5W Tc | 5.5A | SWITCHING | 16 ns | SILICON | N-Channel | 35.5m Ω @ 5A, 10V | 3V @ 250μA | 640pF @ 20V | 20nC @ 10V | 17ns | 10 ns | 20V | 40V | 7.4A | 7.4A Tc | 20A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUD19P06-60-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 6.22mm | 60mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 4 | R-PSSO-G2 | 1 | Other Transistors | 1 | DRAIN | Single | 2.3W | 8 ns | 2.3W Ta 38.5W Tc | -18.3A | 150°C | SWITCHING | 65 ns | SILICON | P-Channel | 60m Ω @ 10A, 10V | 3V @ 250μA | 1710pF @ 25V | 40nC @ 10V | 9ns | 30 ns | 20V | -60V | 18.3A Tc | 60V | 24.2 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR120TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 270mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 77A | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | 100V | 1 | TO-252AA | DRAIN | Single | 2.5W | 6.8 ns | 2.5W Ta 42W Tc | 7.7A | SWITCHING | 18 ns | SILICON | N-Channel | 270m Ω @ 4.6A, 10V | 4V @ 250μA | 360pF @ 25V | 16nC @ 10V | 27ns | 17 ns | 20V | 100V | 2 V | 7.7A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIR166DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 4MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 5W | 28 ns | 1.2V | 5W Ta 48W Tc | 40A | SWITCHING | 44 ns | SILICON | N-Channel | 3.2m Ω @ 15A, 10V | 2.2V @ 250μA | 3340pF @ 15V | 77nC @ 10V | 21ns | 16 ns | 20V | 30V | 1.2 V | 40A Tc | 70A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7108DN-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | ULTRA-LOW RESISTANCE | PowerPAK® 1212-8 | 1.04mm | 3.05mm | 4.9mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 1.5W | 10 ns | 1.5W Ta | 22A | SWITCHING | 60 ns | SILICON | N-Channel | 4.9m Ω @ 22A, 10V | 2V @ 250μA | 30nC @ 4.5V | 10ns | 10 ns | 16V | 20V | 2 V | 14A Ta | 60A | 24 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4896DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | unknown | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Power | Not Qualified | 1 | Single | 1.56W | 17 ns | 2V | 1.56W Ta | 6.7A | 40 ns | SILICON | N-Channel | 16.5m Ω @ 10A, 10V | 2V @ 250μA (Min) | 41nC @ 10V | 11ns | 31 ns | 20V | 6.7A Ta | 80V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4384DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | Single | 1.47W | 10 ns | 1.47W Ta | 10A | SWITCHING | 30V | 45 ns | SILICON | N-Channel | 8.5m Ω @ 15A, 10V | 3V @ 250μA | 18nC @ 4.5V | 13ns | 13 ns | 20V | 10A Ta | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG535DJ | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2009 | no | Obsolete | 1 (Unlimited) | 28 | 15V | 39.7mm | Non-RoHS Compliant | No | 28 | 28-DIP (0.600, 15.24mm) | 16.5V | 10V | 3.31mm | 14.73mm | 90Ohm | Through Hole | 4.190003g | -40°C~85°C TA | 5μA | 50μA | 500MHz | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 15V | 28 | 2.54mm | 1 | 625mW | T-Switch Configuration | Video | 300 ns | 300 ns | 90Ohm | 150 ns | Multiplexer | Single | BREAK-BEFORE-MAKE | 0.02A | 10V~16.5V | 16:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG540DN | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2005 | Obsolete | 1 (Unlimited) | 85°C | 0°C | 15V | 9.04mm | Non-RoHS Compliant | No | 20 | 20-LCC (J-Lead) | 18V | 10V | 3.69mm | 9.04mm | 60Ohm | Surface Mount | 722.005655mg | -40°C~85°C TA | 3.5mA | 6mA | 500MHz | 4 | 800mW | 4 | RGB, T-Switch Configuration | SPST | Video | 800mW | 70 ns | 15V | 10V | 60Ohm | 20-PLCC (9x9) | 500MHz | 50 ns | 4 | Dual, Single | 3V~15V ±3V~15V | SPST | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG542AP | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2016 | Obsolete | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | No | 16 | 16-DIP (0.300, 7.62mm) | 18V | 10V | 500MHz | 60Ohm | Through Hole | -55°C~125°C TA | 6mA | 3.5mA | 4 | 900mW | RGB, T-Switch Configuration | SPST | Video | 100 ns | 15V | 10V | 60Ohm | 60Ohm | 16-DIP Side Brazed | 500MHz | 60 ns | Dual, Single | 3V~15V ±3V~15V | SPST | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG535DJ-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | yes | Obsolete | 1 (Unlimited) | 28 | 15V | 39.7mm | ROHS3 Compliant | Lead Free | No | 28 | 28-DIP (0.600, 15.24mm) | 16.5V | 10V | 3.31mm | 14.73mm | 90Ohm | Through Hole | 4.190003g | -40°C~85°C TA | CMOS | 5μA | 50μA | 500MHz | 1 | 5μA | e3 | Matte Tin (Sn) | DUAL | 15V | DG535 | 28 | 2.54mm | 1 | 625mW | T-Switch Configuration | Video | 625mW | 300 ns | 300 ns | 90Ohm | 150 ns | Multiplexer | 16 | Single | BREAK-BEFORE-MAKE | 9Ohm | 0.02A | 10V~16.5V | 16:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG534ADJ-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2009 | yes | Obsolete | 1 (Unlimited) | 20 | 26.92mm | ROHS3 Compliant | 20 | 20-DIP (0.300, 7.62mm) | 18V | unknown | 10V | 3.81mm | 7.11mm | 90Ohm | Through Hole | 2.259996g | -40°C~85°C TA | CMOS | 600μA | 2mA | 500MHz | 1 | 600μA | e3 | Matte Tin (Sn) | NOT SPECIFIED | 15V | NOT SPECIFIED | DG534 | 20 | 2 | Not Qualified | 515-3V | 625mW | T-Switch Configuration | Ultrasound, Video | 625mW | 300 ns | 300 ns | 15V | 10V | -3V | 90Ohm | 175 ns | Multiplexer | 4 | 12V | Dual, Single | 500ns | BREAK-BEFORE-MAKE | 9Ohm | SPDT | 10V~21V | 2:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG884DN-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2009 | yes | Obsolete | 1 (Unlimited) | 44 | 15V | ROHS3 Compliant | Lead Free | No | 44 | 8 X 4 ARRAY | 44-LCC (J-Lead) | 90Ohm | Surface Mount | 2.386605g | -40°C~85°C TA | NMOS | 1.5mA | 300MHz | 4.57mm | 1 | e3 | Matte Tin (Sn) | QUAD | J BEND | 260 | 15V | 30 | DG884 | 44 | 1 | Multiplexer or Switches | T-Switch Configuration | CROSS POINT SWITCH | Video | 20V | 90Ohm | -3V | 90Ohm | Dual, Single | 300ns | BREAK-BEFORE-MAKE | 3Ohm | 13V~20V | 8:4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG541DJ-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2016 | yes | Obsolete | 1 (Unlimited) | 16 | Through Hole | 15V | 21.33mm | ROHS3 Compliant | 16 | 16-DIP (0.300, 7.62mm) | 18V | unknown | 10V | 3.81mm | 7.11mm | 60Ohm | Through Hole | 1.627801g | -40°C~85°C TA | CMOS | 3.5mA | 6mA | 500MHz | 4 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 15V | NOT SPECIFIED | DG541 | 16 | 1 | Multiplexer or Switches | Not Qualified | 15-3V | 470mW | 4 | RGB, T-Switch Configuration | Video | 470mW | 70 ns | 15V | 10V | -3V | 60Ohm | 50 ns | Dual, Single | 130ns | 85ns | BREAK-BEFORE-MAKE | NO | 60 dB | 2Ohm | 3V~15V ±3V~15V | SPST | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG536DN | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2008 | no | Obsolete | 1 (Unlimited) | 44 | 15V | 16.66mm | Non-RoHS Compliant | No | 44 | 44-LCC (J-Lead) | 16.5V | 10V | 3.69mm | 16.66mm | 90Ohm | Surface Mount | 2.386605g | -40°C~85°C TA | 5μA | 50μA | 500MHz | 1 | e0 | Tin/Lead (Sn/Pb) | QUAD | J BEND | 15V | 44 | 1 | 450mW | T-Switch Configuration | Video | 450mW | 300 ns | 300 ns | 90Ohm | 150 ns | Multiplexer | 16 | Single | BREAK-BEFORE-MAKE | 0.02A | 10V~16.5V | 16:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4455DY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.55mm | 4mm | 295mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 30 | 8 | 1 | 1 | Single | 3.1W | 11 ns | 3.1W Ta 5.9W Tc | 2A | SWITCHING | 52 ns | SILICON | P-Channel | 295m Ω @ 4A, 10V | 4V @ 250μA | 1190pF @ 50V | 42nC @ 10V | 28ns | 35 ns | 20V | 2A | 2.8A Tc | 150V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU320PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | 3 | 6.73mm | ROHS3 Compliant | Lead Free | 3.1A | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.38mm | 1.8Ohm | Through Hole | 329.988449mg | -55°C~150°C TJ | 400V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 260 | 40 | 3 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 42W | 10 ns | 4V | 2.5W Ta 42W Tc | 3.1A | SWITCHING | 30 ns | SILICON | N-Channel | 1.8 Ω @ 1.9A, 10V | 4V @ 250μA | 350pF @ 25V | 20nC @ 10V | 14ns | 13 ns | 20V | 400V | 3.1A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR9310PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2016 | Active | 1 (Unlimited) | 150°C | -55°C | 6.73mm | ROHS3 Compliant | Lead Free | -1.8A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 7Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | -400V | MOSFET (Metal Oxide) | 18A | 1 | 400V | 1 | Single | 50W | 11 ns | -4V | 7Ohm | D-Pak | 50W Tc | -1.8A | 25 ns | P-Channel | 7Ohm @ 1.1A, 10V | 4V @ 250μA | 270pF @ 25V | 13nC @ 10V | 10ns | 24 ns | 20V | -400V | 1.8A Tc | 400V | 270pF | 10V | ±20V | 7 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLU110PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2010 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.38mm | 540mOhm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 2.5W | 9.3 ns | 2V | 2.5W Ta 25W Tc | 4.3A | SWITCHING | 16 ns | SILICON | N-Channel | 540m Ω @ 2.6A, 5V | 2V @ 250μA | 250pF @ 25V | 6.1nC @ 5V | 47ns | 17 ns | 10V | 4.3A Tc | 100V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFD020PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2012 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 4 | 4-DIP (0.300, 7.62mm) | Unknown | 100mOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 3 | R-PDIP-T3 | FET General Purpose Power | 1 | Single | 1.3W | 8.7 ns | 4V | 1W Tc | 2.4A | SWITCHING | 16 ns | SILICON | N-Channel | 100m Ω @ 1.4A, 10V | 4V @ 250μA | 400pF @ 25V | 24nC @ 10V | 55ns | 26 ns | 20V | 60V | 2.4A Tc | 50V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7884BDP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | 7.5mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 4.6W | 30 ns | 4.6W Ta 46W Tc | 18.5A | SWITCHING | 38 ns | SILICON | N-Channel | 7.5m Ω @ 16A, 10V | 3V @ 250μA | 3540pF @ 20V | 77nC @ 10V | 14ns | 11 ns | 20V | 40V | 1 V | 58A Tc | 50A | 54 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHU5N50D-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 3 | 6.73mm | ROHS3 Compliant | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | DRAIN | Single | 12 ns | 3V | 104W Tc | 5.3A | SWITCHING | 14 ns | SILICON | N-Channel | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 325pF @ 100V | 20nC @ 10V | 11ns | 11 ns | 30V | 500V | 5.3A Tc | 28.8 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU214PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2009 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | 2Ohm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | 1 | DRAIN | Single | 2.5W | 7 ns | 4V | 2.5W Ta 25W Tc | 2.2A | SWITCHING | 250V | 16 ns | SILICON | N-Channel | 2 Ω @ 1.3A, 10V | 4V @ 250μA | 140pF @ 25V | 8.2nC @ 10V | 7.6ns | 7 ns | 20V | 2.2A Tc | 250V | 8.8A | 10V | ±20V |
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