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SI4946BEY-T1-GE3

MOSFET 2N-CH 60V 6.5A 8-SOIC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI4946BEY-T1-GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 538
  • Description: MOSFET 2N-CH 60V 6.5A 8-SOIC (Kg)

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Details

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Parameters
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 41MOhm
Terminal Finish MATTE TIN
Max Power Dissipation 3.7W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI4946
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Turn On Delay Time 10 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 41m Ω @ 5.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 30V
Current - Continuous Drain (Id) @ 25°C 6.5A
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 12ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 5.3A
Threshold Voltage 2.4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 30A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.55mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
See Relate Datesheet