English

All Products

View All >>
  • SI5411EDU-T1-GE3

SI5411EDU-T1-GE3

MOSFET -12V [email protected] -25A P-Ch T-FET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI5411EDU-T1-GE3
  • Package: PowerPAK® ChipFET™ Single
  • Datasheet: PDF
  • Stock: 694
  • Description: MOSFET -12V [email protected] -25A P-Ch T-FET (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® ChipFET™ Single
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Pure Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Channels 1
Power Dissipation-Max 3.1W Ta 31W Tc
Element Configuration Single
Turn On Delay Time 30 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 8.2m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 6V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 105nC @ 8V
Rise Time 30ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet