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SI5415AEDU-T1-GE3

MOSFET -20V [email protected] -25A P-CH


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI5415AEDU-T1-GE3
  • Package: PowerPAK® ChipFET™ Single
  • Datasheet: PDF
  • Stock: 910
  • Description: MOSFET -20V [email protected] -25A P-CH (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Package / Case PowerPAK® ChipFET™ Single
Number of Pins 8
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Pure Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Channels 1
Power Dissipation-Max 3.1W Ta 31W Tc
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 12 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 9.6m Ω @ 10A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 10V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 8V
Rise Time 45ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
See Relate Datesheet