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SI5424DC-T1-GE3

MOSFET 30V 6.0A 6.25W 24mohm @ 10V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI5424DC-T1-GE3
  • Package: 8-SMD, Flat Lead
  • Datasheet: PDF
  • Stock: 463
  • Description: MOSFET 30V 6.0A 6.25W 24mohm @ 10V (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Weight 84.99187mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 6.25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 6A
Threshold Voltage 2.3V
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.024Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 40A
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet