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  • SI5433BDC-T1-E3

SI5433BDC-T1-E3

Trans MOSFET P-CH 20V 4.8A 8-Pin Chip FET T/R


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI5433BDC-T1-E3
  • Package: 8-SMD, Flat Lead
  • Datasheet: PDF
  • Stock: 758
  • Description: Trans MOSFET P-CH 20V 4.8A 8-Pin Chip FET T/R (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 10 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 37m Ω @ 4.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.8A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Rise Time 25ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 4.8A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.037Ohm
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet