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SI5461EDC-T1-E3

MOSFET P-CH 20V 4.5A CHIPFET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI5461EDC-T1-E3
  • Package: 8-SMD, Flat Lead
  • Datasheet: PDF
  • Stock: 786
  • Description: MOSFET P-CH 20V 4.5A CHIPFET (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 45mOhm
Terminal Finish MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 2.5 μs
FET Type P-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 4.5A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 4.5μs
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 4.5 μs
Turn-Off Delay Time 27 μs
Continuous Drain Current (ID) -6.2A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4.5A
Drain to Source Breakdown Voltage -20V
Height 1.0922mm
Length 3.0988mm
Width 1.7018mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet