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  • SI5471DC-T1-GE3

SI5471DC-T1-GE3

MOSFET P-CH 20V 6A 1206-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI5471DC-T1-GE3
  • Package: 8-SMD, Flat Lead
  • Datasheet: PDF
  • Stock: 769
  • Description: MOSFET P-CH 20V 6A 1206-8 (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Weight 84.99187mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 20mOhm
Terminal Finish PURE MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Ta 6.3W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 9.1A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2945pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 78 ns
Continuous Drain Current (ID) -6A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage -20V
Height 1.1mm
Length 3.05mm
Width 1.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet