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  • SI6463BDQ-T1-GE3

SI6463BDQ-T1-GE3

MOSFET P-CH 20V 6.2A 8-TSSOP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI6463BDQ-T1-GE3
  • Package: 8-TSSOP (0.173, 4.40mm Width)
  • Datasheet: PDF
  • Stock: 624
  • Description: MOSFET P-CH 20V 6.2A 8-TSSOP (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Packaging Cut Tape (CT)
Published 2006
Series TrenchFET®
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.05W
Technology MOSFET (Metal Oxide)
Pin Count 8
Number of Elements 1
Element Configuration Single
Power Dissipation 1.5W
Turn On Delay Time 35 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 15m Ω @ 7.4A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.2A Ta
Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V
Rise Time 40ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 190 ns
Continuous Drain Current (ID) -7.4A
Threshold Voltage -800mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet