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  • SI7104DN-T1-E3

SI7104DN-T1-E3

MOSFET N-CH 12V 35A PPAK 1212-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7104DN-T1-E3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 884
  • Description: MOSFET N-CH 12V 35A PPAK 1212-8 (Kg)

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Details

Tags

Parameters
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.8W Ta 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.7m Ω @ 26.1A, 4.5V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 6V
Factory Lead Time 14 Weeks
Current - Continuous Drain (Id) @ 25°C 35A Tc
Mount Surface Mount
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 11ns
Mounting Type Surface Mount
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Package / Case PowerPAK® 1212-8
Vgs (Max) ±12V
Fall Time (Typ) 10 ns
Number of Pins 8
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 26.1A
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Gate to Source Voltage (Vgs) 12V
Packaging Tape & Reel (TR)
Drain Current-Max (Abs) (ID) 35A
Published 2015
Drain-source On Resistance-Max 0.0037Ohm
Drain to Source Breakdown Voltage 12V
Series TrenchFET®
Pulsed Drain Current-Max (IDM) 60A
JESD-609 Code e3
Height 1.04mm
Length 3.05mm
Pbfree Code yes
Width 3.05mm
Part Status Active
Radiation Hardening No
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status ROHS3 Compliant
See Relate Datesheet