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SI7107DN-T1-E3

MOSFET P-CH 20V 9.8A 1212-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7107DN-T1-E3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 386
  • Description: MOSFET P-CH 20V 9.8A 1212-8 (Kg)

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Details

Tags

Parameters
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.8m Ω @ 15.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 450μA
Current - Continuous Drain (Id) @ 25°C 9.8A Ta
Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V
Rise Time 55ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 270 ns
Continuous Drain Current (ID) -15.3A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 40A
Height 1.0668mm
Length 3.1496mm
Width 3.1496mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 10.6mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 27 ns
See Relate Datesheet