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  • SI7110DN-T1-GE3

SI7110DN-T1-GE3

MOSFET N-CH 20V 13.5A 1212-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7110DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 681
  • Description: MOSFET N-CH 20V 13.5A 1212-8 (Kg)

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Details

Tags

Parameters
Transistor Element Material SILICON
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V
Operating Temperature -55°C~150°C TJ
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Packaging Tape & Reel (TR)
Vgs (Max) ±20V
Published 2013
Fall Time (Typ) 10 ns
Series TrenchFET®
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 21.1A
JESD-609 Code e3
Threshold Voltage 2.5V
Pbfree Code yes
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0053Ohm
Part Status Active
Drain to Source Breakdown Voltage 20V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pulsed Drain Current-Max (IDM) 60A
Height 1.04mm
Number of Terminations 5
Length 3.05mm
ECCN Code EAR99
Width 3.05mm
Terminal Finish Matte Tin (Sn)
Radiation Hardening No
Subcategory FET General Purpose Powers
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 12 ns
Factory Lead Time 14 Weeks
FET Type N-Channel
Transistor Application SWITCHING
Mount Surface Mount
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5.3m Ω @ 21.1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Package / Case PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C 13.5A Ta
Number of Pins 8
See Relate Datesheet