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  • SI7112DN-T1-GE3

SI7112DN-T1-GE3

Trans MOSFET N-CH 30V 11.3A 8-Pin PowerPAK 1212 T/R


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7112DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 929
  • Description: Trans MOSFET N-CH 30V 11.3A 8-Pin PowerPAK 1212 T/R (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 17.8A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2610pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11.3A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Rise Time 10ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 11.3A
Threshold Voltage 600mV
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.0075Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 20 mJ
Height 1.04mm
Length 3.05mm
Width 3.05mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet