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  • SI7113DN-T1-E3

SI7113DN-T1-E3

Si7113DN Series P-Channel 100 V 0.134 Ohm SMT Power Mosfet -PowerPAK - 1212-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7113DN-T1-E3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 714
  • Description: Si7113DN Series P-Channel 100 V 0.134 Ohm SMT Power Mosfet -PowerPAK - 1212-8 (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 134MOhm
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code S-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.7W Ta 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 134m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1480pF @ 50V
Current - Continuous Drain (Id) @ 25°C 13.2A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 110ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) -13.2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 20A
Height 1.04mm
Length 3.05mm
Width 3.05mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet