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  • SI7117DN-T1-E3

SI7117DN-T1-E3

MOSFET P-CH 150V 2.17A 1212-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7117DN-T1-E3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 356
  • Description: MOSFET P-CH 150V 2.17A 1212-8 (Kg)

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Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.17A Tc
Factory Lead Time 14 Weeks
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 11ns
Mount Surface Mount
Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 150V
Package / Case PowerPAK® 1212-8
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Number of Pins 8
Vgs (Max) ±20V
Transistor Element Material SILICON
Fall Time (Typ) 11 ns
Operating Temperature -55°C~150°C TJ
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 1.1A
Packaging Tape & Reel (TR)
Gate to Source Voltage (Vgs) 20V
Published 2016
Pulsed Drain Current-Max (IDM) 2.2A
Series TrenchFET®
JESD-609 Code e3
Height 1.04mm
Pbfree Code yes
Length 3.05mm
Part Status Active
Width 3.05mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 1.2Ohm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.2W Ta 12.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type P-Channel
See Relate Datesheet