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  • SI7129DN-T1-GE3

SI7129DN-T1-GE3

MOSFET P-CH 30V 35A 1212-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7129DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 200
  • Description: MOSFET P-CH 30V 35A 1212-8 (Kg)

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Details

Tags

Parameters
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 11.4mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3.8W Ta 52.1W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 50 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.4m Ω @ 14.4A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3345pF @ 15V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Factory Lead Time 14 Weeks
Rise Time 43ns
Drain to Source Voltage (Vdss) 30V
Contact Plating Tin
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Mount Surface Mount
Vgs (Max) ±20V
Mounting Type Surface Mount
Fall Time (Typ) 14 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 14.4A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 35A
Pulsed Drain Current-Max (IDM) 60A
Package / Case PowerPAK® 1212-8
DS Breakdown Voltage-Min 30V
Height 1.04mm
Length 3.05mm
Width 3.05mm
Number of Pins 8
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Transistor Element Material SILICON
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
See Relate Datesheet