Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Voltage | Number of Elements | Configuration | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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SIHG30N60E-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 150°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Unknown | 20.7mm | 5.31mm | 125mOhm | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 250W | 19 ns | 2V | 125mOhm | TO-247AC | 250W Tc | 29A | 63 ns | N-Channel | 125mOhm @ 15A, 10V | 4V @ 250μA | 2600pF @ 100V | 130nC @ 10V | 32ns | 36 ns | 20V | 29A Tc | 600V | 2.6nF | 10V | ±30V | 125 mΩ | |||||||||||||||||||||||||||||||||||||||||||
SI5853DDC-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | LITTLE FOOT® | Obsolete | 1 (Unlimited) | 8 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SMD, Flat Lead | 1.1mm | 1.65mm | 105mOhm | Surface Mount | 84.99187mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 30 | 8 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 1.2W | 15 ns | 1.3W Ta 3.1W Tc | 2.9A | SWITCHING | 20V | 21 ns | SILICON | P-Channel | 105m Ω @ 2.9A, 4.5V | 1V @ 250μA | 320pF @ 10V | 12nC @ 8V | 17ns | 17 ns | 8V | Schottky Diode (Isolated) | 4A Tc | 20V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
SI5486DU-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | 3mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerVDFN | Unknown | 750μm | 1.9mm | 15MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | 260 | 30 | 8 | R-XDSO-N3 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 3.1W | 7 ns | 1V | 3.1W Ta 31W Tc | 12A | SWITCHING | 55 ns | SILICON | N-Channel | 15m Ω @ 7.7A, 4.5V | 1V @ 250μA | 2100pF @ 10V | 54nC @ 8V | 15ns | 10 ns | 8V | 20V | 12A Tc | 40A | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
SI7635DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 4.9mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | R-PDSO-C5 | 1 | Other Transistors | 1 | DRAIN | Single | 5W | 19 ns | -2.2V | 5W Ta 54W Tc | -40A | SWITCHING | 65 ns | SILICON | P-Channel | 4.9m Ω @ 26A, 10V | 2.2V @ 250μA | 4595pF @ 10V | 143nC @ 10V | 10ns | 13 ns | 16V | -20V | -2.2 V | 40A Tc | 20V | 70A | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||
SIA406DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | 2.05mm | ROHS3 Compliant | Lead Free | No | 6 | PowerPAK® SC-70-6 | Unknown | 750μm | 2.05mm | 19.8mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | 260 | 40 | 6 | S-XDSO-N3 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 3.5W | 1V | 3.5W Ta 19W Tc | 4.5A | SWITCHING | SILICON | N-Channel | 19.8m Ω @ 10.8A, 4.5V | 1V @ 250μA | 1380pF @ 6V | 23nC @ 5V | 8V | 4.5A Tc | 12V | 20A | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
SIR412DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | R-PDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 3.9W | 13 ns | 3.9W Ta 15.6W Tc | 20A | SWITCHING | 13 ns | SILICON | N-Channel | 12m Ω @ 10A, 10V | 2.5V @ 250μA | 600pF @ 10V | 16nC @ 10V | 13ns | 10 ns | 20V | 25V | 20A Tc | 50A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
SIS456DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | Unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | S-PDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 3.8W | 20 ns | 1V | 3.8W Ta 52W Tc | 35A | SWITCHING | 25 ns | SILICON | N-Channel | 5.1m Ω @ 20A, 10V | 2.2V @ 250μA | 1800pF @ 15V | 55nC @ 10V | 25ns | 12 ns | 20V | 30V | 35A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
SIS414DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | Unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | S-PDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 3.4W | 7 ns | 600mV | 3.4W Ta 31W Tc | 20A | SWITCHING | 30V | 21 ns | SILICON | N-Channel | 16m Ω @ 10A, 4.5V | 1.5V @ 250μA | 795pF @ 15V | 33nC @ 10V | 13ns | 8 ns | 12V | 20A Tc | 30V | 50A | 5 mJ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
SIR878DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Tin | No | 8 | PowerPAK® SO-8 | Unknown | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | 260 | 40 | 8 | R-PDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 5W | 1.2V | 5W Ta 44.5W Tc | 40A | SWITCHING | SILICON | N-Channel | 14m Ω @ 15A, 10V | 2.8V @ 250μA | 1250pF @ 50V | 43nC @ 10V | 20V | 100V | 40A Tc | 20 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFS9N60APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2014 | Active | 1 (Unlimited) | 150°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 750mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 170W | 13 ns | 4V | 750mOhm | D2PAK | 170W Tc | 9.2A | 30 ns | N-Channel | 750mOhm @ 5.5A, 10V | 4V @ 250μA | 1400pF @ 25V | 49nC @ 10V | 25ns | 22 ns | 30V | 600V | 9.2A Tc | 600V | 1.4nF | 10V | ±30V | 750 mΩ | ||||||||||||||||||||||||||||||||||||||||||
SUP70101EL-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | TrenchFET® | Active | Not Applicable | EAR99 | ROHS3 Compliant | TO-220-3 | 19.31mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 260 | 30 | 1 | 375W | 20 ns | 8.1mOhm | 375W Tc | -120A | 175°C | 110 ns | P-Channel | 2.5V @ 250μA | 7000pF @ 50V | 190nC @ 10V | 20V | -100V | 120A Tc | 100V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP450APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 3 | 15.87mm | ROHS3 Compliant | Lead Free | 14A | No | 3 | TO-247-3 | Unknown | 20.7mm | 5.31mm | 400mOhm | Through Hole | 38.000013g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | 3 | 1 | 1 | Single | 190W | 15 ns | 4V | 190W Tc | 14A | SWITCHING | 35 ns | SILICON | N-Channel | 400m Ω @ 8.4A, 10V | 4V @ 250μA | 2038pF @ 25V | 64nC @ 10V | 36ns | 29 ns | 30V | 500V | 4 V | 14A Tc | 56A | 760 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
IRF740LCPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | 10A | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 550mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | 400V | MOSFET (Metal Oxide) | 1 | 1 | Single | 125W | 11 ns | 4V | 550mOhm | TO-220AB | 125W Tc | 570 ns | 10A | 25 ns | N-Channel | 550mOhm @ 6A, 10V | 4V @ 250μA | 1100pF @ 25V | 39nC @ 10V | 31ns | 20 ns | 30V | 400V | 10A Tc | 400V | 1.1nF | 10V | ±30V | 550 mΩ | |||||||||||||||||||||||||||||||||||||||
SISA18ADN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | Unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | S-PDSO-C5 | FET General Purpose Power | 1 | DRAIN | Single | 19.8W | 1.2V | 3.2W Ta 19.8W Tc | 38.3A | SWITCHING | 0.0075Ohm | 15 ns | SILICON | N-Channel | 7.5m Ω @ 10A, 10V | 2.4V @ 250μA | 1000pF @ 15V | 21.5nC @ 10V | 10ns | 7 ns | -16V | 30V | 38.3A Tc | 70A | 5 mJ | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||
SIA446DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | ThunderFET® | Active | 1 (Unlimited) | 3 | EAR99 | 2.05mm | ROHS3 Compliant | 6 | PowerPAK® SC-70-6 | Unknown | 750μm | 2.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | SIA446 | S-PDSO-N3 | 1 | 1 | DRAIN | Single | 5 ns | 3.5V | 3.5W Ta 19W Tc | 7.7A | SWITCHING | 10 ns | SILICON | N-Channel | 177m Ω @ 3A, 10V | 3.5V @ 250μA | 230pF @ 75V | 8nC @ 10V | 13ns | 10 ns | 20V | 150V | 7.7A Tc | 2.5 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
SI2328DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.02mm | 1.4mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Powers | 1 | Single | 730mW | 7 ns | 4V | 730mW Ta | 1.15A | 0.25Ohm | 9 ns | SILICON | N-Channel | 250m Ω @ 1.5A, 10V | 4V @ 250μA | 5nC @ 10V | 11ns | 10 ns | 20V | 1.15A Ta | 100V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
SIR410DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 36W | 25 ns | 1.2V | 4.2W Ta 36W Tc | 35A | SWITCHING | 30 ns | SILICON | N-Channel | 4.8m Ω @ 20A, 10V | 2.5V @ 250μA | 1600pF @ 10V | 41nC @ 10V | 15ns | 15 ns | 20V | 20V | 23A | 35A Tc | 60A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
SI7113DN-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | 1.04mm | 3.05mm | 134MOhm | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | S-PDSO-F5 | 1 | 1 | DRAIN | Single | 3.7W | 30 ns | 3.7W Ta 52W Tc | -13.2A | SWITCHING | 51 ns | SILICON | P-Channel | 134m Ω @ 4A, 10V | 3V @ 250μA | 1480pF @ 50V | 55nC @ 10V | 110ns | 40 ns | 20V | -100V | 13.2A Tc | 100V | 20A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
SQJ463EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | Unknown | Surface Mount | 506.605978mg | -55°C~175°C TJ | MOSFET (Metal Oxide) | 30A | 1 | 40V | 1 | Single | 83W | 21 ns | -2V | 10mOhm | PowerPAK® SO-8 | 83W Tc | -30A | 121 ns | P-Channel | 10mOhm @ 18A, 10V | 2.5V @ 250μA | 5875pF @ 20V | 150nC @ 10V | 17ns | 51 ns | 20V | -40V | 30A Tc | 40V | 5.875nF | 4.5V 10V | ±20V | 10 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
IRF9540PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 175°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | -19A | 3 | TO-220-3 | Unknown | 19.89mm | 4.7mm | 200mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | -100V | MOSFET (Metal Oxide) | 1 | 1 | Single | 150W | 16 ns | -4V | 200mOhm | TO-220AB | 150W Tc | 260 ns | -19A | 175°C | 34 ns | P-Channel | 200mOhm @ 11A, 10V | 4V @ 250μA | 1400pF @ 25V | 61nC @ 10V | 73ns | 57 ns | 20V | -100V | -4 V | 19A Tc | 100V | 1.4nF | 10V | ±20V | 200 mΩ | ||||||||||||||||||||||||||||||||||||||
SI4850EY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | Surface Mount | 506.605978mg | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Powers | 1 | Single | 3.3W | 10 ns | 3V | 1.7W Ta | 6A | SWITCHING | 0.022Ohm | 25 ns | SILICON | N-Channel | 22m Ω @ 6A, 10V | 3V @ 250μA | 27nC @ 10V | 10ns | 12 ns | 20V | 60V | 3 V | 6A | 6A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
SIS407ADN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | Tin | 8 | PowerPAK® 1212-8 | No SVHC | 1.12mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.7W | 12 ns | -1V | 3.7W Ta 39.1W Tc | -16.7A | 150°C | SWITCHING | 0.009Ohm | 120 ns | SILICON | P-Channel | 9m Ω @ 15A, 4.5V | 1V @ 250μA | 5875pF @ 10V | 168nC @ 8V | 4ns | 36 ns | 8V | -20V | 18A Tc | 20V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
SI2333DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 25 ns | -1V | 750mW Ta | -4.1A | SWITCHING | 72 ns | SILICON | P-Channel | 32m Ω @ 5.3A, 4.5V | 1V @ 250μA | 1100pF @ 6V | 18nC @ 4.5V | 60 ns | 8V | -1 V | 4.1A Ta | 12V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
SI3473CDV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3.05mm | ROHS3 Compliant | No | 6 | SOT-23-6 Thin, TSOT-23-6 | 1mm | 1.65mm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6 | 1 | Other Transistors | 1 | Single | 2W | 10 ns | 2W Ta 4.2W Tc | 8A | SWITCHING | 0.022Ohm | 62 ns | SILICON | P-Channel | 22m Ω @ 8.1A, 4.5V | 1V @ 250μA | 2010pF @ 6V | 65nC @ 8V | 15ns | 35 ns | 8V | -12V | 8A | 8A Tc | 12V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
SI7322ADN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | ThunderFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® 1212-8 | 1.17mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | 3.3W | 6 ns | 26W Tc | 5.4A | 150°C | 9 ns | N-Channel | 57m Ω @ 5.5A, 10V | 4V @ 250μA | 360pF @ 50V | 13nC @ 10V | 20V | 100V | 15.1A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIA437DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 6 | PowerPAK® SC-70-6 | Unknown | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.5W | -400mV | 3.5W Ta 19W Tc | 12.6A | SWITCHING | 20V | SILICON | P-Channel | 14.5m Ω @ 8A, 4.5V | 900mV @ 250μA | 2340pF @ 10V | 90nC @ 8V | 8V | 29.7A | 29.7A Tc | 20V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
SQJA86EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | 260 | NOT SPECIFIED | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 48W | 10 ns | 48W Tc | 30A | 175°C | 23 ns | SILICON | N-Channel | 19m Ω @ 8A, 10V | 2.5V @ 250μA | 1400pF @ 25V | 32nC @ 10V | 20V | 80V | 30A Tc | 84A | 20 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
SQSA80ENW-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | PowerPAK® 1212-8 | unknown | 1.17mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | S-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 62.5W | 9 ns | 62.5W Tc | 18A | 175°C | 0.027Ohm | 19 ns | SILICON | N-Channel | 21m Ω @ 10A, 10V | 2.5V @ 250μA | 1358pF @ 40V | 21nC @ 10V | 20V | 80V | 18A Tc | 72A | 24.2 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
SI7129DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® 1212-8 | 1.04mm | 3.05mm | 11.4mOhm | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W | 50 ns | 3.8W Ta 52.1W Tc | 14.4A | SWITCHING | 30V | 36 ns | SILICON | P-Channel | 11.4m Ω @ 14.4A, 10V | 2.8V @ 250μA | 3345pF @ 15V | 71nC @ 10V | 43ns | 14 ns | 20V | 35A | 35A Tc | 30V | 60A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
IRFPE50PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | Through Hole | 150°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | 7.8A | No | 3 | TO-247-3 | Unknown | 5.45mm | 20.7mm | 5.31mm | 1.2Ohm | Through Hole | 38.000013g | -55°C~150°C TJ | 800V | MOSFET (Metal Oxide) | 1 | 1 | Single | 190W | 19 ns | 4V | 1.2Ohm | TO-247-3 | 190W Tc | 980 ns | 7.8A | 120 ns | N-Channel | 1.2Ohm @ 4.7A, 10V | 4V @ 250μA | 3100pF @ 25V | 200nC @ 10V | 38ns | 39 ns | 20V | 800V | 800V | 4 V | 7.8A Tc | 800V | 3.1nF | 10V | ±20V | 1.2 Ω |
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