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  • SI7148DP-T1-E3

SI7148DP-T1-E3

MOSFET 75V 28A 0.011Ohm


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7148DP-T1-E3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 120
  • Description: MOSFET 75V 28A 0.011Ohm (Kg)

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Details

Tags

Parameters
ECCN Code EAR99
Vgs (Max) ±20V
Resistance 11mOhm
Fall Time (Typ) 100 ns
Turn-Off Delay Time 39 ns
Additional Feature AVALANCHE RATED
Continuous Drain Current (ID) 28A
Threshold Voltage 2V
Technology MOSFET (Metal Oxide)
Gate to Source Voltage (Vgs) 20V
Terminal Position DUAL
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 60A
Terminal Form FLAT
Factory Lead Time 14 Weeks
Dual Supply Voltage 75V
Contact Plating Tin
Max Junction Temperature (Tj) 150°C
Pin Count 8
Mount Surface Mount
Nominal Vgs 2 V
Mounting Type Surface Mount
JESD-30 Code R-PDSO-F5
Turn Off Time-Max (toff) 90ns
Package / Case PowerPAK® SO-8
Turn On Time-Max (ton) 96ns
Number of Pins 8
Height 1.17mm
Length 4.9mm
Width 5.89mm
Radiation Hardening No
Number of Elements 1
REACH SVHC Unknown
Weight 506.605978mg
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Transistor Element Material SILICON
Number of Channels 1
Manufacturer Package Identifier S17-0173-Single
Power Dissipation-Max 5.4W Ta 96W Tc
Operating Temperature -55°C~150°C TJ
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Packaging Tape & Reel (TR)
Power Dissipation 5.4W
Case Connection DRAIN
Published 2007
Turn On Delay Time 17 ns
Series TrenchFET®
FET Type N-Channel
JESD-609 Code e3
Transistor Application SWITCHING
Pbfree Code yes
Rds On (Max) @ Id, Vgs 11m Ω @ 15A, 10V
Part Status Active
Vgs(th) (Max) @ Id 2.5V @ 250μA
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 35V
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Number of Terminations 5
Rise Time 255ns
Termination SMD/SMT
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
See Relate Datesheet