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  • SI7190DP-T1-GE3

SI7190DP-T1-GE3

MOSFET N-CH 250V 18.4A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7190DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 297
  • Description: MOSFET N-CH 250V 18.4A PPAK SO-8 (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 118MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 5.4W Ta 96W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 96W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 118m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2214pF @ 125V
Current - Continuous Drain (Id) @ 25°C 18.4A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 4.4A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 30A
DS Breakdown Voltage-Min 250V
Height 1.04mm
Length 4.9mm
Width 5.89mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet